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DTSTAMP:20210916T132450Z
LOCATION:Michel Mayor
DTSTART;TZID=Europe/Stockholm:20210706T153000
DTEND;TZID=Europe/Stockholm:20210706T160000
UID:submissions.pasc-conference.org_PASC21_sess135_msa380@linklings.com
SUMMARY:Dislocation Transmission across sigma 3{112} Incoherent Twin Bound
 ary: A Combined Atomistic and Phase-Field Study
DESCRIPTION:Minisymposium\n\nDislocation Transmission across sigma 3{112} 
 Incoherent Twin Boundary: A Combined Atomistic and Phase-Field Study\n\nMa
 , Kim, Mathew, Luscher, Cao...\n\nDislocation slip behavior has a signific
 ant impact on plastic deformation and grain boundaries (GBs) also play an 
 important role as pinning or nucleation sources for dislocations. Thus the
  interaction between dislocation and GBs is crucial to understand the stre
 ngthening mechanism in polycrystalline materials. Atomistic scale studies 
 on isolated dislocations or interactions between dislocations and material
  interfaces have been suggested for their high accuracy. However, larger-s
 cale modeling, which describes the defect behavior well but is computation
 ally efficient enough to address larger systems, is needed to make connect
 ions between microscale phenomena and overall material response. Mesoscale
  modeling bridges the gap between atomic- and continuum scale, and one of 
 the successful mesoscale modeling techniques to describe dislocation motio
 n is Phase field dislocation dynamics (PFDD). Here, with a combined atomis
 tic, phase-field modeling approach, we study the interaction between glidi
 ng dislocations and a sigma 3{112} incoherent twin boundary (ITB) in Cu. T
 his twin boundary has been shown to consist of a repetition of three parti
 al dislocations. Thus we find that the transmission event and correspondin
 g critical stress vary depending on where the gliding dislocation impinges
  with the GB. We present direct comparison between the atomistic approach 
 and mesoscale approach to understand the slip transfer process.\n\nDomain:
  Chemistry and Materials, Physics, Engineering
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