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DTSTAMP:20210916T132452Z
LOCATION:Michel Mayor
DTSTART;TZID=Europe/Stockholm:20210707T153000
DTEND;TZID=Europe/Stockholm:20210707T160000
UID:submissions.pasc-conference.org_PASC21_sess150_msa345@linklings.com
SUMMARY:Dynamic Crystal Plasticity Modeling of Single Crystal Tantalum and
  Validation Using Taylor Cylinder Impact Tests
DESCRIPTION:Minisymposium\n\nDynamic Crystal Plasticity Modeling of Single
  Crystal Tantalum and Validation Using Taylor Cylinder Impact Tests\n\nNgu
 yen, Fensin, Luscher\n\nWe have significantly extended a previous dislocat
 ion-density based constitutive theory to enable modeling the strong influe
 nce of temperature and strain rate on the thermomechanical behavior of sin
 gle crystal body centered cubic (BCC) tantalum. The extension includes an 
 expression of saturation dislocation density as a function of instantaneou
 s strain rate and temperature and a dynamic recovery fraction that effecti
 vely saturates the immobile dislocation density. Crystallographic slip alo
 ng on the {110} or {112} planes as well as their combination are examined.
  The model is calibrated using a Bayesian approach against experimental me
 asurements include uniaxial stress-strain curves obtained from quasi-stati
 c and split Hopkinson pressure bar (SHPB) compression tests in a wide rang
 e of strain rate and temperature, and velocity-time histories from single 
 crystal flyer plate impact experiments. The calibrated model was applied t
 o simulate previous Taylor cylinder impact experiments. Both the calibrati
 on results and simulations of Taylor cylinder impact experiments suggest t
 hat the model must include slip on both {110} and {112} planes and also sh
 ould account for the twinning versus anti-twinning sense of slip on {112} 
 planes, via two distinct values of the corresponding Peierls stress, in or
 der to appropriately represent the orientation dependence of the flow stre
 ss and match the deformed geometry of the single crystal Taylor cylinders.
 \n\nDomain: CS and Math, Chemistry and Materials, Physics, Engineering
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